N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXYS IXFX80N60P3

RS Stock No.:: 168-4748
Mfr. Part No.:: IXFX80N60P3
Manufacturer:: IXYS

N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXYS IXFX80N60P3

This image is representative of the product range

Price Each (In a Tube of 30)**

PHP871.131

(exc. VAT)

PHP975.667

(inc. VAT)

31 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Tube**
30 +	PHP871.131	PHP26,133.93

**price indicative

RS Stock No.:: 168-4748
Mfr. Part No.:: IXFX80N60P3
Manufacturer:: IXYS

IXFK80N60P3, IXFX80N60P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Polar3
Package Type	PLUS247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.3 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	5.21mm
Typical Gate Charge @ Vgs	190 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	16.13mm
Height	21.34mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXYS IXFX80N60P3

FREE delivery for over PHP7,000.00 (ex VAT)

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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