IXYS HiperFET, Polar3 N-Channel MOSFET, 26 A, 500 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 920-0981
- Mfr. Part No.:
- IXFH26N50P3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
PHP12,410.76
(exc. VAT)
PHP13,900.05
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 30 unit(s) shipping from November 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | PHP413.692 | PHP12,410.76 |
| 60 - 90 | PHP410.058 | PHP12,301.74 |
| 120 - 270 | PHP399.767 | PHP11,993.01 |
| 300 - 570 | PHP362.045 | PHP10,861.35 |
| 600 + | PHP357.826 | PHP10,734.78 |
*price indicative
- RS Stock No.:
- 920-0981
- Mfr. Part No.:
- IXFH26N50P3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Series | HiperFET, Polar3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3mm | |
| Length | 16.26mm | |
| Height | 21.46mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Series HiperFET, Polar3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Maximum Operating Temperature 150°C | ||
Width 5.3mm | ||
Length 16.26mm | ||
Height 21.46mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
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