onsemi Type P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SOT-23 NVR1P02T1G
- RS Stock No.:
- 802-2534
- Mfr. Part No.:
- NVR1P02T1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 50 units)*
PHP693.00
(exc. VAT)
PHP776.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from April 20, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 50 - 50 | PHP13.86 | PHP693.00 |
| 100 - 200 | PHP13.448 | PHP672.40 |
| 250 - 450 | PHP13.193 | PHP659.65 |
| 500 - 950 | PHP12.016 | PHP600.80 |
| 1000 + | PHP11.773 | PHP588.65 |
*price indicative
- RS Stock No.:
- 802-2534
- Mfr. Part No.:
- NVR1P02T1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 400mW | |
| Typical Gate Charge Qg @ Vgs | 2.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Height | 1.01mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 400mW | ||
Typical Gate Charge Qg @ Vgs 2.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Height 1.01mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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