onsemi Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 NTR4171PT1G
- RS Stock No.:
- 780-4749
- Mfr. Part No.:
- NTR4171PT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
PHP681.60
(exc. VAT)
PHP763.40
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 200 unit(s) shipping from September 21, 2026
- Plus 4,325 unit(s) shipping from September 28, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP27.264 | PHP681.60 |
| 50 - 100 | PHP26.445 | PHP661.13 |
| 125 - 225 | PHP25.652 | PHP641.30 |
| 250 - 475 | PHP24.883 | PHP622.08 |
| 500 + | PHP24.137 | PHP603.43 |
*price indicative
- RS Stock No.:
- 780-4749
- Mfr. Part No.:
- NTR4171PT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15.6nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15.6nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.01mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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