Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET, 320 mA, 60 V Enhancement, 6-Pin SC-88 BSS138PS,115
- RS Stock No.:
- 792-0901
- Mfr. Part No.:
- BSS138PS,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 40 units)*
PHP399.84
(exc. VAT)
PHP447.84
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 360 unit(s) ready to ship from another location
- Plus 160 unit(s) shipping from January 23, 2026
- Plus 3,000 unit(s) shipping from July 08, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 40 - 40 | PHP9.996 | PHP399.84 |
| 80 - 160 | PHP9.483 | PHP379.32 |
| 200 - 360 | PHP9.191 | PHP367.64 |
| 400 - 760 | PHP8.64 | PHP345.60 |
| 800 + | PHP7.939 | PHP317.56 |
*price indicative
- RS Stock No.:
- 792-0901
- Mfr. Part No.:
- BSS138PS,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 320mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-88 | |
| Series | Trench MOSFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.6Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 320mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.72nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 320mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-88 | ||
Series Trench MOSFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.6Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 320mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.72nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Related links
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- Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET 30 V Enhancement115