Nexperia Isolated Trench MOSFET 2 Type P-Channel MOSFET, 160 mA, 50 V Enhancement, 6-Pin SC-88 BSS84AKS,115
- RS Stock No.:
- 792-0917
- Mfr. Part No.:
- BSS84AKS,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 30 units)*
PHP314.07
(exc. VAT)
PHP351.75
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,000 unit(s) shipping from June 03, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 30 - 30 | PHP10.469 | PHP314.07 |
| 60 - 120 | PHP10.461 | PHP313.83 |
| 150 - 270 | PHP9.318 | PHP279.54 |
| 300 - 570 | PHP8.23 | PHP246.90 |
| 600 + | PHP6.70 | PHP201.00 |
*price indicative
- RS Stock No.:
- 792-0917
- Mfr. Part No.:
- BSS84AKS,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 160mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SC-88 | |
| Series | Trench MOSFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 320mW | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 160mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SC-88 | ||
Series Trench MOSFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 320mW | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Width 1.35 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Related links
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- Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET 60 V Enhancement115
- Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET 30 V Enhancement115