STMicroelectronics FDmesh Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60ND
- RS Stock No.:
- 791-9285
- Mfr. Part No.:
- STD13NM60ND
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP805.86
(exc. VAT)
PHP902.565
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 245 left, ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP161.172 | PHP805.86 |
| 50 - 245 | PHP157.69 | PHP788.45 |
| 250 - 995 | PHP154.546 | PHP772.73 |
| 1000 - 2495 | PHP151.396 | PHP756.98 |
| 2500 + | PHP148.246 | PHP741.23 |
*price indicative
- RS Stock No.:
- 791-9285
- Mfr. Part No.:
- STD13NM60ND
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | FDmesh | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 109W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24.5nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Height | 2.4mm | |
| Width | 6.2 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series FDmesh | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 109W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24.5nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Height 2.4mm | ||
Width 6.2 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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