N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STMicroelectronics STW34NM60ND
- RS Stock No.:
- 168-7473
- Mfr. Part No.:
- STW34NM60ND
- Manufacturer:
- STMicroelectronics
Subtotal (1 tube of 30 units)**
PHP12,847.80
(exc. VAT)
PHP14,389.50
(inc. VAT)
480 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Tube** |
---|---|---|
30 + | PHP428.26 | PHP12,847.80 |
**price indicative
- RS Stock No.:
- 168-7473
- Mfr. Part No.:
- STW34NM60ND
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 29 A | |
Maximum Drain Source Voltage | 600 V | |
Series | FDmesh | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 110 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 190 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 80.4 nC @ 10 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Length | 15.75mm | |
Width | 5.15mm | |
Height | 20.15mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 600 V | ||
Series FDmesh | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 80.4 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 15.75mm | ||
Width 5.15mm | ||
Height 20.15mm | ||
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