Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3
- RS Stock No.:
- 787-9389
- Mfr. Part No.:
- SIRA14DP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
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Subtotal (1 tape of 10 units)*
PHP316.54
(exc. VAT)
PHP354.52
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,000 unit(s) shipping from December 29, 2025
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Units | Per Unit | Per Tape* |
|---|---|---|
| 10 - 10 | PHP31.654 | PHP316.54 |
| 20 - 40 | PHP31.076 | PHP310.76 |
| 50 - 90 | PHP28.908 | PHP289.08 |
| 100 - 190 | PHP24.283 | PHP242.83 |
| 200 + | PHP23.344 | PHP233.44 |
*price indicative
- RS Stock No.:
- 787-9389
- Mfr. Part No.:
- SIRA14DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 31.2W | |
| Typical Gate Charge Qg @ Vgs | 19.4nC | |
| Forward Voltage Vf | 0.76V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Width | 5.26 mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 31.2W | ||
Typical Gate Charge Qg @ Vgs 19.4nC | ||
Forward Voltage Vf 0.76V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Width 5.26 mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
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Related links
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- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
