Vishay Si7456DDP Type N-Channel MOSFET, 27.8 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SI7456DDP-T1-GE3
- RS Stock No.:
- 787-9244
- Mfr. Part No.:
- SI7456DDP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP505.68
(exc. VAT)
PHP566.36
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 15,810 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP101.136 | PHP505.68 |
| 25 - 95 | PHP91.022 | PHP455.11 |
| 100 - 245 | PHP81.92 | PHP409.60 |
| 250 - 495 | PHP73.726 | PHP368.63 |
| 500 + | PHP66.352 | PHP331.76 |
*price indicative
- RS Stock No.:
- 787-9244
- Mfr. Part No.:
- SI7456DDP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8 | |
| Series | Si7456DDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.031Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 35.7W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-Free | |
| Length | 6.25mm | |
| Width | 5.26 mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8 | ||
Series Si7456DDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.031Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 35.7W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-Free | ||
Length 6.25mm | ||
Width 5.26 mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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