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    N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8SH Vishay SISHA10DN-T1-GE3

    Bulk discount available

    Subtotal (1 reel of 3000 units)**

    PHP67,857.00

    (exc. VAT)

    PHP75,999.00

    (inc. VAT)

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    Temporarily out of stock - back order for despatch 17/07/2025, delivery within 10 working days from desptach date*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Reel**
    3000 - 3000PHP22.619PHP67,857.00
    6000 +PHP21.497PHP64,491.00

    **price indicative

    RS Stock No.:
    188-4897
    Mfr. Part No.:
    SISHA10DN-T1-GE3
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    N

    Maximum Continuous Drain Current

    30 A

    Maximum Drain Source Voltage

    30 V

    Package Type

    PowerPAK 1212-8SH

    Mounting Type

    Surface Mount

    Pin Count

    8

    Maximum Drain Source Resistance

    5 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    2.2V

    Minimum Gate Threshold Voltage

    1.1V

    Maximum Power Dissipation

    39 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -16 V, +20 V

    Width

    3.3mm

    Number of Elements per Chip

    1

    Length

    3.3mm

    Typical Gate Charge @ Vgs

    34 nC @ 10 V

    Maximum Operating Temperature

    +150 °C

    Forward Diode Voltage

    1.2V

    Height

    0.93mm

    Minimum Operating Temperature

    -55 °C

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