N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAK 1212-8SH Vishay SISHA10DN-T1-GE3
- RS Stock No.:
- 188-4897
- Mfr. Part No.:
- SISHA10DN-T1-GE3
- Manufacturer:
- Vishay
Subtotal (1 reel of 3000 units)**
PHP67,857.00
(exc. VAT)
PHP75,999.00
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Reel** |
---|---|---|
3000 - 3000 | PHP22.619 | PHP67,857.00 |
6000 + | PHP21.497 | PHP64,491.00 |
**price indicative
- RS Stock No.:
- 188-4897
- Mfr. Part No.:
- SISHA10DN-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
---|---|---|
Manufacturer | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | PowerPAK 1212-8SH | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Minimum Gate Threshold Voltage | 1.1V | |
Maximum Power Dissipation | 39 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +20 V | |
Width | 3.3mm | |
Number of Elements per Chip | 1 | |
Length | 3.3mm | |
Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Forward Diode Voltage | 1.2V | |
Height | 0.93mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK 1212-8SH | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 39 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +20 V | ||
Width 3.3mm | ||
Number of Elements per Chip 1 | ||
Length 3.3mm | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Height 0.93mm | ||
Minimum Operating Temperature -55 °C | ||
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