onsemi N+P Load Switch 2 Type P, Type N-Channel Power MOSFET, 1.3 A, 8 V Enhancement, 6-Pin SC-88 NTJD1155LT1G

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Subtotal (1 tape of 20 units)*

PHP269.80

(exc. VAT)

PHP302.20

(inc. VAT)

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20 - 20PHP13.49PHP269.80
40 - 180PHP13.085PHP261.70
200 - 380PHP12.692PHP253.84
400 - 780PHP12.312PHP246.24
800 +PHP11.943PHP238.86

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Packaging Options:
RS Stock No.:
780-0605
Mfr. Part No.:
NTJD1155LT1G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Power MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

1.3A

Maximum Drain Source Voltage Vds

8V

Package Type

SC-88

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

320mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

400mW

Forward Voltage Vf

-0.8V

Maximum Operating Temperature

-55°C

Transistor Configuration

N+P Load Switch

Height

1mm

Length

2.2mm

Width

1.35 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Features and Benefits:


• ESD Protection

• Ultra-low Rds P-Channel load switch

• V range of 1.8 – 8.0V

• ON/OFF Range – 1.5 to 8.0V

• SOT 363 package

• Drive loads up to 1.3A with 8V.

Applications:


• High side load switch with level shift

• Mobile phones

• Digital cameras

• PDA’s

• Media Players

Dual N/P-Channel MOSFET, ON Semiconductor


The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

MOSFET Transistors, ON Semiconductor


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