Toshiba Type P-Channel MOSFET, 2 A, 30 V Enhancement, 6-Pin UF6 SSM6J402TU(TE85L,F
- RS Stock No.:
- 756-2779
- Mfr. Part No.:
- SSM6J402TU(TE85L,F
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP221.43
(exc. VAT)
PHP248.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 590 unit(s) ready to ship from another location
- Plus 1,830 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP22.143 | PHP221.43 |
| 50 - 90 | PHP21.479 | PHP214.79 |
| 100 - 240 | PHP20.815 | PHP208.15 |
| 250 - 490 | PHP20.373 | PHP203.73 |
| 500 + | PHP19.931 | PHP199.31 |
*price indicative
- RS Stock No.:
- 756-2779
- Mfr. Part No.:
- SSM6J402TU(TE85L,F
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | UF6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 225mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.3nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Width | 2 mm | |
| Height | 0.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type UF6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 225mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.3nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Width 2 mm | ||
Height 0.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
Dual MOSFET P-Channel SSM6Pxx, Toshiba
MOSFET Transistors, Toshiba
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