Infineon OptiMOS 3 Type N-Channel MOSFET, 36 A, 200 V Enhancement, 8-Pin TDSON BSC320N20NS3GATMA1
- RS Stock No.:
- 754-5311
- Mfr. Part No.:
- BSC320N20NS3GATMA1
- Manufacturer:
- Infineon
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- RS Stock No.:
- 754-5311
- Mfr. Part No.:
- BSC320N20NS3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS 3 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS 3 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS 3 Series MOSFET, 200V Drain Source Voltage, 36A Continuous Drain Current - BSC320N20NS3GATMA1
This MOSFET is a high-voltage N-channel switching transistor designed for compact surface-mount power conversion and switching applications. It operates across a wide ambient range and is intended for duty in demanding thermal environments, providing a balance of blocking capability and current handling for medium-power designs.
Features and Benefits:
• 200V drain-source rating enables high-voltage switching capacity
• 36A continuous drain current supports substantial load currents
• 32mΩ low Rds(on) reduces conduction losses during operation
• 125W maximum power dissipation permits high-power handling
• 22nC typical gate charge enables efficient gate-drive switching
• Vgs tolerance up to 20V allows flexible drive voltages
• 36A continuous drain current supports substantial load currents
• 32mΩ low Rds(on) reduces conduction losses during operation
• 125W maximum power dissipation permits high-power handling
• 22nC typical gate charge enables efficient gate-drive switching
• Vgs tolerance up to 20V allows flexible drive voltages
Applications
• Suitable for switch-mode power supplies in industrial systems
• Ideal for DC-DC converters requiring high-voltage switching
• Used for motor-drive stages with significant current demands
• Can be used for power-factor correction circuits in supplies
• Suitable for telecoms and server power delivery modules
• Ideal for DC-DC converters requiring high-voltage switching
• Used for motor-drive stages with significant current demands
• Can be used for power-factor correction circuits in supplies
• Suitable for telecoms and server power delivery modules
What thermal extremes can the device withstand during operation?
It is specified to function from -55°C up to 150°C, accommodating wide temperature excursions in both cold-start and high-temperature environments.
How does the package influence PCB layout considerations?
The TDSON surface-mount package has a low profile and requires attention to thermal pad design for heat dissipation and correct soldering footprint to maintain thermal performance.
What gate-drive characteristics are needed for fast switching?
Expect to drive the gate up to 20V
the typical 22nC gate charge should be considered when selecting gate drivers to balance switching speed and drive energy.
How compact is the device for space-constrained assemblies?
The component occupies a small SMD footprint with a low 1.1mm height, supporting compact board designs while allowing adequate thermal handling when properly mounted.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON
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