Infineon OptiMOS 3 Type N-Channel MOSFET, 15.2 A, 200 V Enhancement, 8-Pin TDSON BSC900N20NS3GATMA1

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PHP748.72

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PHP838.57

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10 - 40PHP74.872PHP748.72
50 - 240PHP72.626PHP726.26
250 - 490PHP70.447PHP704.47
500 - 1240PHP68.333PHP683.33
1250 +PHP66.282PHP662.82

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Packaging Options:
RS Stock No.:
906-4400
Mfr. Part No.:
BSC900N20NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

15.2A

Maximum Drain Source Voltage Vds

200V

Package Type

TDSON

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9nC

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Length

6.1mm

Width

5.35 mm

Automotive Standard

No

RoHS Status: Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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