Infineon OptiMOS 3 Type N-Channel MOSFET, 42 A, 100 V Enhancement, 8-Pin TDSON

RS Stock No.:: 165-6893
Mfr. Part No.:: BSC160N10NS3GATMA1
Manufacturer:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 42 A, 100 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

PHP195,020.00

(exc. VAT)

PHP218,420.00

(inc. VAT)

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In Stock

5,000 unit(s) ready to ship from another location

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Units	Per Unit	Per Reel*
5000 +	PHP39.004	PHP195,020.00

*price indicative

RS Stock No.:: 165-6893
Mfr. Part No.:: BSC160N10NS3GATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS 3
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	60W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	6.35 mm
	Length	5.35mm
	Height	1.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS 3
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 60W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 6.35 mm
	Length 5.35mm
	Height 1.1mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

Infineon OptiMOS™ 3 Series MOSFET, 42A Maximum Continuous Drain Current, 60W Maximum Power Dissipation - BSC160N10NS3GATMA1

This MOSFET is engineered for efficiency and durability across a variety of applications. It serves as a fundamental component in power management systems, excelling in switching applications, making it suitable for automation and electrical sectors. Its impressive features, including high continuous drain current and low on-state resistance, optimise performance in various environments, ensuring strength and efficiency.

Features & Benefits

• Supports a continuous drain current of 42A for high-power tasks

• Operates at a maximum drain-source voltage of 100V for broad application use

• Exhibits low on-state resistance of 33mΩ, enhancing energy efficiency

• Designed with a surface mount configuration for simple circuit integration

• Functions in high temperature environments, up to +150°C

• Utilises a single N-channel configuration for improved stability

Applications

• Employed in power supplies and converters for effective energy management

• Suitable for that require Compact and efficient power devices

• Utilised in motor control systems for enhanced response times

• Ideal for telecommunications systems needing robust power capabilities

• Commonly applied in renewable energy systems for efficient power conversion

What are the thermal limits for operating this device?

The device operates within a temperature range of -55°C to +150°C, suitable for various environmental conditions.

How can the low on-state resistance benefit my circuit design?

The low on-state resistance reduces power loss during operation, improving the efficiency of your circuit and decreasing heat generation.

Is there a specific mounting method required for this MOSFET?

This MOSFET features a surface mount design, facilitating straightforward integration into printed circuit boards.

Can this MOSFET be used for pulsed applications?

Yes, it can accommodate pulsed currents of up to 168A, making it apt for applications involving transient loads.

What safety features should I consider during installation?

It is important to manage the gate-source voltage within the specified range of -20V to +20V to prevent damage, while ensuring compliance with thermal resistance ratings for optimal performance.