Infineon OptiMOS™ 2 N-Channel MOSFET, 100 A, 20 V, 8-Pin TDSON BSC026N02KSGAUMA1

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Packaging Options:
RS Stock No.:
752-8154
Mfr. Part No.:
BSC026N02KSGAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

20 V

Package Type

TDSON

Series

OptiMOS™ 2

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

2.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

40 nC @ 4.5 V

Width

5.35mm

Number of Elements per Chip

1

Length

6.35mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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