Infineon Single OptiMOS 2 1 Type N, Type N-Channel MOSFET, 100 A, 20 V Enhancement, 8-Pin TDSON BSC026N02KSGAUMA1

This image is representative of the product range

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
911-4846
Mfr. Part No.:
BSC026N02KSGAUMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

20V

Package Type

TDSON

Series

OptiMOS 2

Mount Type

Surface, Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.8W

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

40nC

Forward Voltage Vf

1.2V

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Length

6.35mm

Height

1.1mm

Width

5.35 mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
DE

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.