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    N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB Infineon IRLB3813PBF

    RS Stock No.:
    725-9313
    Mfr. Part No.:
    IRLB3813PBF
    Manufacturer:
    Infineon
    Infineon
    View all MOSFETs
    136 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
    Add to Basket
    units

    Added

    Price Each (In a Pack of 2)

    PHP110.055

    (exc. VAT)

    PHP123.262

    (inc. VAT)

    unitsPer UnitPer Pack*
    2 - 8PHP110.055PHP220.11
    10 - 38PHP106.755PHP213.51
    40 - 98PHP103.555PHP207.11
    100 - 198PHP100.45PHP200.90
    200 +PHP97.44PHP194.88
    *price indicative
    Packaging Options:
    RS Stock No.:
    725-9313
    Mfr. Part No.:
    IRLB3813PBF
    Manufacturer:
    Infineon

    Legislation and Compliance


    Product Details

    N-Channel Power MOSFET 30V, Infineon


    The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current260 A
    Maximum Drain Source Voltage30 V
    Package TypeTO-220AB
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance2 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage2.35V
    Minimum Gate Threshold Voltage1.35V
    Maximum Power Dissipation230 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-20 V, +20 V
    Number of Elements per Chip1
    Length10.67mm
    Typical Gate Charge @ Vgs57 nC @ 4.5 V
    Maximum Operating Temperature+175 °C
    Transistor MaterialSi
    Width4.83mm
    Height9.02mm
    SeriesHEXFET
    Minimum Operating Temperature-55 °C
    136 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
    Add to Basket
    units

    Added

    Price Each (In a Pack of 2)

    PHP110.055

    (exc. VAT)

    PHP123.262

    (inc. VAT)

    unitsPer UnitPer Pack*
    2 - 8PHP110.055PHP220.11
    10 - 38PHP106.755PHP213.51
    40 - 98PHP103.555PHP207.11
    100 - 198PHP100.45PHP200.90
    200 +PHP97.44PHP194.88
    *price indicative
    Packaging Options: