STMicroelectronics Type N-Channel MOSFET, 250 mA, 800 V Enhancement, 4-Pin SOT-223 STN1NK80Z
- RS Stock No.:
- 714-1076
- Mfr. Part No.:
- STN1NK80Z
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP338.20
(exc. VAT)
PHP378.80
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,690 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP33.82 | PHP338.20 |
| 20 - 40 | PHP33.788 | PHP337.88 |
| 50 - 90 | PHP26.003 | PHP260.03 |
| 100 - 190 | PHP25.969 | PHP259.69 |
| 200 + | PHP23.05 | PHP230.50 |
*price indicative
- RS Stock No.:
- 714-1076
- Mfr. Part No.:
- STN1NK80Z
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 16Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Width | 3.5 mm | |
| Height | 1.8mm | |
| Distrelec Product Id | 304-43-898 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 16Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Width 3.5 mm | ||
Height 1.8mm | ||
Distrelec Product Id 304-43-898 | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 4-Pin SOT-223
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
- STMicroelectronics Type N-Channel MOSFET 450 V Enhancement, 4-Pin SOT-223
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223 STN1HNK60
- STMicroelectronics Type N-Channel MOSFET 450 V Enhancement, 4-Pin SOT-223 STN3N45K3
- DiodesZetex ZVN4525G Type N-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Nexperia BSP126 Type N-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- DiodesZetex ZVN4525G Type N-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 ZVN4525GTA