N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STMicroelectronics STW10NK80Z
- RS Stock No.:
- 920-8865
- Mfr. Part No.:
- STW10NK80Z
- Manufacturer:
- STMicroelectronics
Subtotal (1 tube of 30 units)**
PHP5,738.88
(exc. VAT)
PHP6,427.56
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Tube** |
---|---|---|
30 - 30 | PHP191.296 | PHP5,738.88 |
60 - 90 | PHP185.557 | PHP5,566.71 |
120 - 270 | PHP179.99 | PHP5,399.70 |
300 - 570 | PHP174.591 | PHP5,237.73 |
600 + | PHP169.353 | PHP5,080.59 |
**price indicative
- RS Stock No.:
- 920-8865
- Mfr. Part No.:
- STW10NK80Z
- Manufacturer:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 9 A | |
Maximum Drain Source Voltage | 800 V | |
Package Type | TO-247 | |
Series | MDmesh, SuperMESH | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 900 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 160 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Width | 5.15mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Length | 15.75mm | |
Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
Height | 20.15mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-247 | ||
Series MDmesh, SuperMESH | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 900 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5.15mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 15.75mm | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Height 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
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