Vishay IRL Type N-Channel Power MOSFET, 15 A, 100 V Enhancement, 3-Pin TO-220AB
- RS Stock No.:
- 708-4866
- Mfr. Part No.:
- IRL530PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP405.08
(exc. VAT)
PHP453.69
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- 5 left, ready to ship from another location
- Final 10 unit(s) shipping from January 01, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP81.016 | PHP405.08 |
| 25 - 95 | PHP79.396 | PHP396.98 |
| 100 - 245 | PHP77.81 | PHP389.05 |
| 250 - 495 | PHP76.252 | PHP381.26 |
| 500 + | PHP74.732 | PHP373.66 |
*price indicative
- RS Stock No.:
- 708-4866
- Mfr. Part No.:
- IRL530PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220AB | |
| Series | IRL | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 2.5V | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Maximum Power Dissipation Pd | 88W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.01mm | |
| Width | 4.7 mm | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220AB | ||
Series IRL | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 2.5V | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Maximum Power Dissipation Pd 88W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 9.01mm | ||
Width 4.7 mm | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRL Type N-Channel Power MOSFET 100 V Enhancement, 3-Pin TO-220AB IRL530PBF
- Vishay IRL Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Vishay IRL Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay IRL Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRL Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRL630PBF
- Vishay IRL Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IRL640SPBF
- Vishay IRL Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRL510PBF
- Vishay IRFBE Type N-Channel Power MOSFET 900 V Enhancement, 3-Pin TO-220AB