Vishay IRF840S Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-263 IRF840SPBF

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Subtotal (1 pack of 5 units)*

PHP838.95

(exc. VAT)

PHP939.60

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 20PHP167.79PHP838.95
25 - 95PHP163.60PHP818.00
100 - 245PHP159.504PHP797.52
250 - 495PHP155.514PHP777.57
500 +PHP151.624PHP758.12

*price indicative

Packaging Options:
RS Stock No.:
708-4752
Distrelec Article No.:
304-36-067
Mfr. Part No.:
IRF840SPBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

500V

Series

IRF840S

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

850mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

63nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

150°C

Length

10.41mm

Height

4.83mm

Width

9.65mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

Vishay IRF840S Series Power MOSFET, 500V Drain Source Voltage, 125W Maximum Power Dissipation - IRF840SPBF


This power MOSFET is a high-voltage N-channel switching device designed for surface-mount applications in power conversion and control systems. It operates across a wide thermal range and is intended for use where robust voltage handling and moderate current capability are required, such as industrial power supplies and high-voltage switching stages.

Features and Benefits:


• 500V drain-source rating enables high-voltage switching
• 8A continuous drain current supports sustained load currents
• 125W power dissipation allows high-power handling
• 850mΩ Rds(on) reduces conduction losses at operational currents
• 63nC typical gate charge permits predictable switching performance
• 20V gate-source limit provides wide gate-drive margin

Applications


• Suitable for high-voltage power-supply switching stages
• Ideal for motor-drive inverter front-ends
• Used with boost-converter topologies in industrial units
• Can be used for switch-mode power-rectification modules
• Suitable for high-voltage load switching in test equipment

What mounting method is required for reliable assembly?


It is supplied in a TO-263 package configured for surface-mount PCB attachment, enabling reflow soldering and thermal connection to a PCB copper area.

How does the device perform across temperature extremes?


The junction is rated to operate from -55°C up to 150°C, allowing use in environments with wide ambient and thermal swings.

What gate-drive limitations must be observed?


Gate-source voltage must not exceed 20V to prevent device damage, so gate-drive circuitry should include appropriate clamping or level control.

Are there automotive qualifications for this part?


It is not specified as meeting automotive standards, so it should not be assumed automotive-grade for vehicle-safety applications.

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