Infineon HEXFET Type N-Channel MOSFET, 200 A, 60 V Enhancement, 3-Pin TO-247 IRFP3206PBF

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Subtotal (1 pack of 2 units)*

PHP363.28

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PHP406.88

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 18PHP181.64PHP363.28
20 - 38PHP176.19PHP352.38
40 - 98PHP170.91PHP341.82
100 - 498PHP165.785PHP331.57
500 +PHP160.805PHP321.61

*price indicative

Packaging Options:
RS Stock No.:
688-6989
Mfr. Part No.:
IRFP3206PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

120nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

280W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

15.87mm

Standards/Approvals

No

Width

5.31 mm

Height

20.7mm

Distrelec Product Id

304-35-445

Automotive Standard

No

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