N-Channel MOSFET, 1.5 A, 800 V, 3-Pin TO-220F onsemi FQPF2N80
- RS Stock No.:
- 671-5253
- Mfr. Part No.:
- FQPF2N80
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
PHP511.04
(exc. VAT)
PHP572.37
(inc. VAT)
5 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
|---|---|---|
| 5 - 20 | PHP102.208 | PHP511.04 |
| 25 - 95 | PHP99.14 | PHP495.70 |
| 100 - 245 | PHP93.19 | PHP465.95 |
| 250 - 495 | PHP84.802 | PHP424.01 |
| 500 + | PHP74.626 | PHP373.13 |
**price indicative
- RS Stock No.:
- 671-5253
- Mfr. Part No.:
- FQPF2N80
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.5 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | QFET | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.3 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 35 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.16mm | |
| Width | 4.7mm | |
| Transistor Material | Si | |
| Height | 9.19mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 800 V | ||
Series QFET | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 35 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.16mm | ||
Width 4.7mm | ||
Transistor Material Si | ||
Height 9.19mm | ||
Minimum Operating Temperature -55 °C | ||
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