onsemi QFET Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220 FQP8N80C

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PHP960.40

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PHP1,075.65

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 20PHP192.08PHP960.40
25 - 95PHP186.316PHP931.58
100 - 245PHP175.14PHP875.70
250 - 495PHP159.376PHP796.88
500 +PHP140.252PHP701.26

*price indicative

Packaging Options:
RS Stock No.:
671-5199
Mfr. Part No.:
FQP8N80C
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Series

QFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.55Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

178W

Maximum Operating Temperature

150°C

Length

10.1mm

Standards/Approvals

No

Width

4.7 mm

Height

9.4mm

Automotive Standard

No

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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