onsemi QFET Type N-Channel MOSFET, 850 mA, 200 V Enhancement, 4-Pin SOT-223 FQT4N20LTF

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Subtotal (1 pack of 5 units)*

PHP278.52

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PHP311.94

(inc. VAT)

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5 - 20PHP55.704PHP278.52
25 - 45PHP50.134PHP250.67
50 - 245PHP45.118PHP225.59
250 - 495PHP40.61PHP203.05
500 +PHP36.552PHP182.76

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Packaging Options:
RS Stock No.:
671-1065
Mfr. Part No.:
FQT4N20LTF
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

850mA

Maximum Drain Source Voltage Vds

200V

Series

QFET

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

2.2W

Typical Gate Charge Qg @ Vgs

4nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.5mm

Height

1.6mm

Width

3.56 mm

Standards/Approvals

No

Automotive Standard

No

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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