Infineon OptiMOS Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 3-Pin SOT-223 BSP603S2LHUMA1

RS Stock No.:: 462-2935
Mfr. Part No.:: BSP603S2LHUMA1
Manufacturer:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 3-Pin SOT-223 BSP603S2LHUMA1

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Subtotal (1 pack of 10 units)*

PHP1,023.65

(exc. VAT)

PHP1,146.49

(inc. VAT)

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Last RS stock

Final 20 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
10 - 10	PHP102.365	PHP1,023.65
20 - 40	PHP101.285	PHP1,012.85
50 - 90	PHP100.209	PHP1,002.09
100 - 190	PHP83.307	PHP833.07
200 +	PHP82.468	PHP824.68

*price indicative

RS Stock No.:: 462-2935
Mfr. Part No.:: BSP603S2LHUMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SOT-223
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Power Dissipation Pd	1.8W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	6.5mm
	Width	3.5 mm
	Height	1.6mm
	Automotive Standard	AEC-Q

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 55V
	Package Type SOT-223
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Power Dissipation Pd 1.8W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 6.5mm
	Width 3.5 mm
	Height 1.6mm
	Automotive Standard AEC-Q

Infineon OptiMOS™ Series MOSFET, 5.2A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP603S2LHUMA1

This N-channel MOSFET is engineered for efficient performance across various electrical applications. With a maximum continuous drain current of 5.2A and a maximum drain-source voltage of 55V, it provides robust capabilities for power management and control, making it an important component for professionals in automotive and electronics industries.

Features & Benefits

• Low RDS(on) minimises power loss during operation

• Maximum gate threshold voltage improves switching efficiency

• Surface mount design facilitates integration into compact PCBs

• AEC-qualified to meet stringent automotive standards

• High-temperature operation rated up to +150°C for durability

Applications

• Power management in automotive electronics

• Suitable for DC-DC converters in electric vehicles

• Utilised in motor control for robotics and automation

• Load switch in consumer electronics

What is the typical gate charge at 10V?

The typical gate charge is 31nC, optimising switching performance at 10V.

Is this suitable for applications in high-temperature environments?

Yes, it operates reliably at temperatures up to +150°C, ideal for challenging conditions.

How does this component handle significant current loads?

With a maximum continuous drain current of 5.2A, it effectively manages high loads while maintaining performance.

Can this MOSFET effectively reduce energy losses?

Yes, the low RDS(on) feature minimises on-state resistance, aiding in reducing energy losses during operation.

Does this product adhere to environmental standards?

Yes, it is RoHS compliant, ensuring it meets environmental safety standards for electronic components.