STMicroelectronics MASTERG Type P, Type N-Channel MOSFET, 6.5 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN4LTR

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PHP609.40

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1 - 24PHP544.11
25 - 49PHP527.79
50 - 99PHP511.96
100 - 249PHP496.60
250 +PHP481.69

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Packaging Options:
RS Stock No.:
287-7043
Mfr. Part No.:
MASTERGAN4LTR
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

650V

Package Type

QFN-9

Series

MASTERG

Mount Type

Surface

Pin Count

31

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

40mW

Typical Gate Charge Qg @ Vgs

1.5nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Width

9 mm

Standards/Approvals

RoHS, ECOPACK

Length

9mm

Height

1mm

Automotive Standard

No

COO (Country of Origin):
TH
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

Zero reverse recovery loss

UVLO protection on VCC

Internal bootstrap diode

Interlocking function

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