Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

PHP627.00

(exc. VAT)

PHP702.20

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
10 - 90PHP62.70PHP627.00
100 - 240PHP49.226PHP492.26
250 - 490PHP45.024PHP450.24
500 - 990PHP41.356PHP413.56
1000 +PHP35.353PHP353.53

*price indicative

Packaging Options:
RS Stock No.:
281-6040
Mfr. Part No.:
SISS66DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

178.3A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212-8S

Series

SIS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00138Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24.7nC

Maximum Power Dissipation Pd

65.8W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Width

3.3 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.

TrenchFET Generation IV power MOSFET

SKYFET with monolithic schottky diode

Related links