Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 4 units)*

PHP500.192

(exc. VAT)

PHP560.216

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 6,000 unit(s) shipping from March 16, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
4 - 56PHP125.048PHP500.19
60 - 96PHP119.858PHP479.43
100 - 236PHP106.175PHP424.70
240 - 996PHP104.288PHP417.15
1000 +PHP102.393PHP409.57

*price indicative

Packaging Options:
RS Stock No.:
280-0001
Mfr. Part No.:
SISS5623DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

36.3A

Maximum Drain Source Voltage Vds

60V

Series

SiSS5623DN

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.046Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10.1nC

Maximum Power Dissipation Pd

56.8W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

Related links