Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

PHP277,731.00

(exc. VAT)

PHP311,058.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP92.577PHP277,731.00

*price indicative

RS Stock No.:
279-9943
Mfr. Part No.:
SIR5110DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47.6A

Maximum Drain Source Voltage Vds

100V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0125Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

59.5W

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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