Vishay SIJ Type P-Channel MOSFET, 44.4 A, 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3

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Subtotal (1 pack of 4 units)*

PHP559.36

(exc. VAT)

PHP626.48

(inc. VAT)

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Units
Per Unit
Per Pack*
4 - 56PHP139.84PHP559.36
60 - 96PHP127.055PHP508.22
100 - 236PHP113.07PHP452.28
240 - 996PHP110.675PHP442.70
1000 +PHP108.28PHP433.12

*price indicative

Packaging Options:
RS Stock No.:
279-9936
Mfr. Part No.:
SIJ4819DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

44.4A

Maximum Drain Source Voltage Vds

80V

Series

SIJ

Package Type

SO-8L

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.0207Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

73.5W

Typical Gate Charge Qg @ Vgs

65nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.13mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Less voltage drop

Reduces conduction loss

Fully lead (Pb)-free device

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