Vishay SIHR Type N-Channel MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3

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PHP394.35

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PHP441.67

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1 - 49PHP394.35
50 - 99PHP295.63
100 - 249PHP262.72
250 - 999PHP257.32
1000 +PHP251.92

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Packaging Options:
RS Stock No.:
279-9929
Mfr. Part No.:
SIHR080N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

600V

Package Type

8x8LR

Series

SIHR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

500W

Typical Gate Charge Qg @ Vgs

63nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

8mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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