Vishay SQJQ186ER Type N-Channel MOSFET, 329 A, 30 V Enhancement, 8-Pin PowerPAK (8x8LR)

This image is representative of the product range

View all MOSFETs
Supply shortage
Due to a global supply shortage, we don't know when this will be back in stock.
RS Stock No.:
252-0313
Mfr. Part No.:
SQJQ186ER-T1_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

329A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK (8x8LR)

Series

SQJQ186ER

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0014mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

43nC

Maximum Power Dissipation Pd

214W

Maximum Operating Temperature

175°C

Width

4.9 mm

Standards/Approvals

AEC-Q101

Length

6.15mm

Height

1.6mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height

Related links