Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3
- RS Stock No.:
- 279-9916
- Mfr. Part No.:
- SIHH155N60EF-T1GE3
- Manufacturer:
- Vishay
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Units | Per Unit |
|---|---|
| 1 - 49 | PHP332.30 |
| 50 - 99 | PHP325.87 |
| 100 - 249 | PHP322.65 |
| 250 - 999 | PHP316.22 |
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*price indicative
- RS Stock No.:
- 279-9916
- Mfr. Part No.:
- SIHH155N60EF-T1GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHH | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHH | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Automotive Standard No | ||
Vishay SIHH Series MOSFET, 600V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SIHH155N60EF-T1GE3
This MOSFET is a high-voltage N-channel transistor designed for power switching in surface-mount assemblies. It combines a robust voltage rating with substantial continuous current capability and is intended for circuits requiring efficient switching and thermal tolerance across a wide ambient range.
Features and Benefits:
• 600V drain rating enabling high-voltage switching applications
• 18A continuous drain current supporting heavy-load operation
• 0.159Ω Rds(on) reduces conduction losses under load
• 156W power dissipation assists higher-power handling
• 38nC typical gate charge for controlled switching transitions
• 30V gate-source rating permits standard gate-drive voltages
• 18A continuous drain current supporting heavy-load operation
• 0.159Ω Rds(on) reduces conduction losses under load
• 156W power dissipation assists higher-power handling
• 38nC typical gate charge for controlled switching transitions
• 30V gate-source rating permits standard gate-drive voltages
Applications
• Suitable for industrial motor drive front-ends
• Ideal for high-voltage power converters and inverters
• Used with synchronous rectification and switching stages
• Can be used for high-power LED driver circuits
• Employed in high-voltage test and measurement equipment
• Ideal for high-voltage power converters and inverters
• Used with synchronous rectification and switching stages
• Can be used for high-power LED driver circuits
• Employed in high-voltage test and measurement equipment
What temperature range can it operate within reliably?
It functions across a wide span from -55°C to 150°C, accommodating cold starts and elevated operating temperatures.
What packaging and mounting method does it use for PCB assembly?
It is supplied in a PowerPAK 8x8 surface-mount package designed for low-profile board mounting and efficient thermal contact.
How many pins are available for connection and control?
Four pins are provided to implement drain, source and gate connections in standard MOSFET configurations.
What is the device’s forward voltage characteristic relevant to intrinsic diode conduction?
The built-in diode exhibits a typical forward voltage of 1.2V during conduction events.
Related links
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