Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- RS Stock No.:
- 268-8303
- Mfr. Part No.:
- SIHH250N60EF-T1GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP535.47
(exc. VAT)
PHP599.726
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 3,000 unit(s) shipping from December 29, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP267.735 | PHP535.47 |
| 50 - 98 | PHP259.705 | PHP519.41 |
| 100 - 248 | PHP244.125 | PHP488.25 |
| 250 - 998 | PHP222.15 | PHP444.30 |
| 1000 + | PHP195.495 | PHP390.99 |
*price indicative
- RS Stock No.:
- 268-8303
- Mfr. Part No.:
- SIHH250N60EF-T1GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHH | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.25Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHH | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.25Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay power MOSFET with fast body diode and 4th generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies, and telecom power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
Related links
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