Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- RS Stock No.:
- 268-8303
- Mfr. Part No.:
- SIHH250N60EF-T1GE3
- Manufacturer:
- Vishay
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PHP664.02
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PHP743.70
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP332.01 | PHP664.02 |
| 50 - 98 | PHP322.055 | PHP644.11 |
| 100 - 248 | PHP302.74 | PHP605.48 |
| 250 - 998 | PHP275.49 | PHP550.98 |
| 1000 + | PHP242.44 | PHP484.88 |
*price indicative
- RS Stock No.:
- 268-8303
- Mfr. Part No.:
- SIHH250N60EF-T1GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHH | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.25Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHH | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.25Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 13A Continuous Drain Current - SIHH250N60EF-T1GE3
This MOSFET is a high-voltage switching device intended for power conversion and control applications where compact surface mounting is required. It operates as an enhancement-mode N-channel transistor and is designed to handle elevated voltages and currents in demanding thermal environments while conforming to RoHS restrictions.
Features and Benefits:
• 650V rating enables high-voltage switching capability
• 13A continuous current supports substantial load drive
• 0.25 Ω Rds(on) reduces conduction losses under load
• 89W power dissipation allows sustained thermal performance
• 23 nC typical gate charge permits moderate-speed gate transitions
• Vgs maximum 30V ensures robust gate-drive margin
• 13A continuous current supports substantial load drive
• 0.25 Ω Rds(on) reduces conduction losses under load
• 89W power dissipation allows sustained thermal performance
• 23 nC typical gate charge permits moderate-speed gate transitions
• Vgs maximum 30V ensures robust gate-drive margin
Applications
• Suitable for offline switch-mode power supplies
• Ideal for high-voltage motor drive stages
• Used with isolated gate drivers in power converters
• Can be used for resonant and soft-switching topologies
• Suitable for industrial power-management modules
• Ideal for high-voltage motor drive stages
• Used with isolated gate drivers in power converters
• Can be used for resonant and soft-switching topologies
• Suitable for industrial power-management modules
What temperature extremes can it tolerate in operation?
It is specified to operate across a wide temperature span from -55 °C up to 150 °C for use in harsh thermal conditions.
Which package and mounting method are provided for compact assemblies?
It is supplied in a PowerPAK 8x8 package intended for surface-mount placement to save board area and improve thermal conduction.
How does the device’s forward voltage affect body-diode conduction?
The forward voltage of 1.2V indicates the typical voltage drop across the intrinsic diode during reverse conduction, influencing loss calculations in synchronous rectification or freewheeling paths.
What pin configuration is available for circuit integration?
The component exposes four pins, facilitating separate connections for source, drain, gate and tab or thermal-pad arrangements during PCB layout.
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