Vishay SIHG Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3

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Subtotal (1 pack of 2 units)*

PHP562.13

(exc. VAT)

PHP629.586

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 2PHP281.065PHP562.13
4 - 8PHP275.385PHP550.77
10 - 28PHP269.695PHP539.39
30 - 98PHP264.015PHP528.03
100 +PHP254.26PHP508.52

*price indicative

Packaging Options:
RS Stock No.:
279-9912
Mfr. Part No.:
SIHG155N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247AC

Series

SIHG

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

38nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

15.7mm

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET with Fast body diode and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

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