Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- RS Stock No.:
- 268-8299
- Mfr. Part No.:
- SIHG150N60E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
PHP683.88
(exc. VAT)
PHP765.94
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 500 unit(s) shipping from August 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP341.94 | PHP683.88 |
| 10 - 98 | PHP331.685 | PHP663.37 |
| 100 - 498 | PHP311.78 | PHP623.56 |
| 500 - 998 | PHP283.72 | PHP567.44 |
| 1000 + | PHP249.67 | PHP499.34 |
*price indicative
- RS Stock No.:
- 268-8299
- Mfr. Part No.:
- SIHG150N60E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHG | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHG | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Length 15.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHG Series MOSFET, 650V Maximum Drain Source Voltage, 22A Maximum Continuous Drain Current - SIHG150N60E-GE3
This MOSFET is a high-voltage enhancement-mode N-channel transistor designed for power-switching in demanding electronic equipment. It operates across an extended temperature range and is supplied in a through-hole package suited to robust mounting and serviceable assemblies. RoHS conformity supports its use where restricted substances requirements apply.
Features and Benefits:
• 650V drain-to-source rating enables high-voltage switching
• 22A continuous current supports substantial load handling
• 0.158 Ω Rds(on) reduces conduction losses during operation
• 36 nC typical gate charge optimises switching dynamics
• 179W maximum power dissipation allows high-power duty
• 30V gate tolerance accommodates common driver voltages
• 22A continuous current supports substantial load handling
• 0.158 Ω Rds(on) reduces conduction losses during operation
• 36 nC typical gate charge optimises switching dynamics
• 179W maximum power dissipation allows high-power duty
• 30V gate tolerance accommodates common driver voltages
Applications
• Suitable for industrial high-voltage converters and inverters
• Ideal for motor-drive stages in control systems
• Used with forced-air cooled power supplies and regulators
• Can be used for UPS and energy-storage switching systems
• Suitable for through-hole prototyping and repairable assemblies
• Ideal for motor-drive stages in control systems
• Used with forced-air cooled power supplies and regulators
• Can be used for UPS and energy-storage switching systems
• Suitable for through-hole prototyping and repairable assemblies
What package type should I allow for when designing a board?
It is supplied in a TO-247AC through-hole package that requires a compatible mounting footprint and provision for heatsinking to manage thermal loads.
How does temperature affect continuous operation limits?
The device is rated to operate from -55 °C up to 150 °C, so thermal management and derating strategies should be applied at elevated junction temperatures to maintain reliability.
What gate drive considerations are recommended for efficient switching?
With a typical gate charge of 36 nC and a maximum Vgs of 30V, choose a driver capable of delivering the required charge quickly while not exceeding the gate voltage limit.
What diode behaviour should be expected during synchronous switching?
The intrinsic forward element exhibits approximately 1.2V forward voltage, which influences conduction losses when the body diode conducts during reverse-recovery events.
Related links
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3
- STMicroelectronics STI28 Type N-Channel MOSFET 650 V Enhancement, 3-Pin I2PAK
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP60R099C7XKSA1
- STMicroelectronics STI28 Type N-Channel MOSFET 650 V Enhancement, 3-Pin I2PAK STI28N60M2