Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- RS Stock No.:
- 268-8299
- Mfr. Part No.:
- SIHG150N60E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP553.03
(exc. VAT)
PHP619.394
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 500 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP276.515 | PHP553.03 |
| 10 - 98 | PHP268.22 | PHP536.44 |
| 100 - 498 | PHP252.125 | PHP504.25 |
| 500 - 998 | PHP229.435 | PHP458.87 |
| 1000 + | PHP201.90 | PHP403.80 |
*price indicative
- RS Stock No.:
- 268-8299
- Mfr. Part No.:
- SIHG150N60E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | SIHG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series SIHG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay E series power MOSFET which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
Related links
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3
- STMicroelectronics STI28 Type N-Channel MOSFET 650 V Enhancement, 3-Pin I2PAK
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPP60R099C7XKSA1
- STMicroelectronics STI28 Type N-Channel MOSFET 650 V Enhancement, 3-Pin I2PAK STI28N60M2