Infineon SPP18P06P-H Type P-Channel MOSFET, -18.7 A, 60 V Enhancement, 3-Pin PG-TO252-3
- RS Stock No.:
- 273-7553
- Distrelec Article No.:
- 304-41-690
- Mfr. Part No.:
- SPP18P06PHXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP511.56
(exc. VAT)
PHP572.945
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 480 unit(s) shipping from January 12, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP102.312 | PHP511.56 |
| 10 - 20 | PHP90.426 | PHP452.13 |
| 25 - 95 | PHP88.704 | PHP443.52 |
| 100 - 245 | PHP72.342 | PHP361.71 |
| 250 + | PHP71.652 | PHP358.26 |
*price indicative
- RS Stock No.:
- 273-7553
- Distrelec Article No.:
- 304-41-690
- Mfr. Part No.:
- SPP18P06PHXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -18.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SPP18P06P-H | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.13Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81.1W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1.33V | |
| Maximum Operating Temperature | 175°C | |
| Length | 40mm | |
| Standards/Approvals | Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -18.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SPP18P06P-H | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.13Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81.1W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1.33V | ||
Maximum Operating Temperature 175°C | ||
Length 40mm | ||
Standards/Approvals Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | ||
Height 1.5mm | ||
Width 40 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel small signal MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a halogen free according to IEC61249 2 21.
RoHS compliant
Avalanche rated
Enhancement mode
Pb free lead finishing
Qualified according to AEC Q101
Related links
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