Infineon OptiMOS Type P-Channel MOSFET, 4.3 A, 60 V Enhancement, 3-Pin PG-TO252-3

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Subtotal (1 pack of 10 units)*

PHP296.01

(exc. VAT)

PHP331.53

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP29.601PHP296.01
50 - 90PHP25.047PHP250.47
100 - 240PHP23.266PHP232.66
250 - 990PHP22.771PHP227.71
1000 +PHP22.276PHP222.76

*price indicative

RS Stock No.:
273-3008
Mfr. Part No.:
IPD40DP06NMATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.3A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.7nC

Maximum Power Dissipation Pd

19W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suit

Easy interface to MCU

Improved efficiency at low loads due to low Qg

Fast switching

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