Infineon IPT Type N-Channel MOSFET, 313 A, 60 V Enhancement, 8-Pin PG-HSOF-8 IPT012N06NATMA1

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Subtotal (1 reel of 2000 units)*

PHP376,462.00

(exc. VAT)

PHP421,638.00

(inc. VAT)

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Units
Per Unit
Per Reel*
2000 +PHP188.231PHP376,462.00

*price indicative

RS Stock No.:
273-5351
Mfr. Part No.:
IPT012N06NATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

313A

Maximum Drain Source Voltage Vds

60V

Series

IPT

Package Type

PG-HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

106nC

Maximum Power Dissipation Pd

214W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC1, RoHS

Automotive Standard

No

The Infineon Power MOSFET is optimized for high current applications such as forklift, light electric vehicles, POL and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. It is qualified according to JEDEC1 for target applications.

Halogen free

RoHS compliant

Pb free lead plating

Superior thermal resistance

100 percent avalanche tested

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