Infineon IPT Type N-Channel MOSFET, 331 A, 80 V Enhancement, 8-Pin PG-HSOF-8 IPT014N08NM5ATMA1

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PHP321.16

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PHP359.70

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1 - 49PHP321.16
50 - 99PHP291.87
100 - 249PHP267.63
250 - 999PHP247.45
1000 +PHP229.26

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RS Stock No.:
273-2792
Mfr. Part No.:
IPT014N08NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

331A

Maximum Drain Source Voltage Vds

80V

Package Type

PG-HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

160nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, RoHS, JEDEC

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon MOSFET is a N channel 80 V MOSFET and optimized for battery powered applications. It is qualified according to JEDEC for target applications. This MOSFET is fully qualified according to JEDEC for industrial applications and halogen free according to IEC61249 2 21.

RoHS compliant

Pb free lead plating

Excellent gate charge

Very low on resistance

100 percent avalanche tested

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