Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 700 V Enhancement, 4-Pin PG-VSON-4 IPL65R230C7AUMA1
- RS Stock No.:
- 273-5349
- Mfr. Part No.:
- IPL65R230C7AUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
PHP342,942.00
(exc. VAT)
PHP384,096.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP114.314 | PHP342,942.00 |
*price indicative
- RS Stock No.:
- 273-5349
- Mfr. Part No.:
- IPL65R230C7AUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS C7 | |
| Package Type | PG-VSON-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.23Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 67W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC(J-STD20 andJESD22) | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS C7 | ||
Package Type PG-VSON-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.23Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 67W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC(J-STD20 andJESD22) | ||
Automotive Standard No | ||
The Infineon Power MOSFET constructed with CoolMOS™ revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Halogen free
Better efficiency
Pb free lead plating
High power density
Better control of the gate
Related links
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 4-Pin PG-VSON-4
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 4-Pin TO-247 IPZ65R045C7XKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247 IPZ60R040C7XKSA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247 IPZA60R080P7XKSA1
