Infineon CoolMOS C7 Type N-Channel MOSFET, 50 A, 600 V Enhancement, 4-Pin TO-247 IPZ60R040C7XKSA1

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PHP540.57

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PHP605.44

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1 - 9PHP540.57
10 - 99PHP495.41
100 - 249PHP456.91
250 - 499PHP424.34
500 +PHP412.49

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Packaging Options:
RS Stock No.:
217-2591
Mfr. Part No.:
IPZ60R040C7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

CoolMOS C7

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

227W

Typical Gate Charge Qg @ Vgs

107nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

41.42mm

Length

16.13mm

Width

5.21 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

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