Vishay SQ4401CEY Type P-Channel MOSFET, 17.3 A, 40 V Enhancement, 8-Pin SO-8 SQ4401CEY-T1_GE3
- RS Stock No.:
- 268-8355
- Mfr. Part No.:
- SQ4401CEY-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP579.22
(exc. VAT)
PHP648.725
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- 2,410 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP115.844 | PHP579.22 |
| 50 - 95 | PHP112.37 | PHP561.85 |
| 100 - 245 | PHP105.624 | PHP528.12 |
| 250 - 995 | PHP96.12 | PHP480.60 |
| 1000 + | PHP84.588 | PHP422.94 |
*price indicative
- RS Stock No.:
- 268-8355
- Mfr. Part No.:
- SQ4401CEY-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17.3A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQ4401CEY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.025Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 7.14W | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17.3A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQ4401CEY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.025Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 7.14W | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive P channel TrenchFET power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
Related links
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