Vishay SIJH Type N-Channel MOSFET, 174 A, 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- RS Stock No.:
- 268-8325
- Mfr. Part No.:
- SIJH5700E-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP352.44
(exc. VAT)
PHP394.73
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 1,870 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 49 | PHP352.44 |
| 50 - 99 | PHP341.86 |
| 100 - 249 | PHP321.35 |
| 250 - 999 | PHP292.43 |
| 1000 + | PHP257.34 |
*price indicative
- RS Stock No.:
- 268-8325
- Mfr. Part No.:
- SIJH5700E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SIJH | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0041Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 7.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SIJH | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0041Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 7.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is fully lead Pb free device. It is used in applications such as synchronous rectification, motor drive control, battery management.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
Related links
- Vishay SIJH Type N-Channel MOSFET 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- Vishay SIJH Type N-Channel MOSFET 100 V Enhancement, 4-Pin 8x8L SIJH5100E-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 4-Pin PowerPAK (8x8L)
- Vishay N-Channel 80 V Type N-Channel MOSFET 80 V, 4-Pin PowerPAK (8x8L)
- Vishay N-Channel 80 V Type N-Channel MOSFET 80 V, 4-Pin PowerPAK (8x8L) SIJH800E-T1-GE3
- Vishay Type N-Channel MOSFET 60 V Depletion, 4-Pin PowerPAK (8x8L) SIJH600E-T1-GE3
- Vishay SIJ4406DP Type N-Channel Single MOSFETs 40 V Enhancement, 4-Pin PowerPAK
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK