Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- RS Stock No.:
- 268-8317
- Mfr. Part No.:
- SIHP085N60EF-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP12,779.20
(exc. VAT)
PHP14,312.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP255.584 | PHP12,779.20 |
| 100 - 450 | PHP247.916 | PHP12,395.80 |
| 500 - 950 | PHP238.00 | PHP11,900.00 |
| 1000 + | PHP226.10 | PHP11,305.00 |
*price indicative
- RS Stock No.:
- 268-8317
- Mfr. Part No.:
- SIHP085N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct
Low effective capacitance
Avalanche energy rated
Low figure of merit
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