Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3

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Subtotal (1 tube of 50 units)*

PHP12,079.25

(exc. VAT)

PHP13,528.75

(inc. VAT)

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Temporarily out of stock
  • 1,000 unit(s) shipping from May 07, 2026
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Units
Per Unit
Per Tube*
50 - 50PHP241.585PHP12,079.25
100 - 450PHP234.337PHP11,716.85
500 - 950PHP224.964PHP11,248.20
1000 +PHP213.716PHP10,685.80

*price indicative

RS Stock No.:
268-8291
Mfr. Part No.:
SIHB085N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

SIHB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

184W

Typical Gate Charge Qg @ Vgs

63nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correctio

Low effective capacitance

Avalanche energy rated

Low figure of merit

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