Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- RS Stock No.:
- 268-8311
- Mfr. Part No.:
- SIHK105N60E-T1-GE3
- Manufacturer:
- Vishay
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PHP722.06
(exc. VAT)
PHP808.70
(inc. VAT)
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In Stock
- Plus 2,050 unit(s) shipping from August 10, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP361.03 | PHP722.06 |
| 50 - 98 | PHP350.20 | PHP700.40 |
| 100 - 248 | PHP329.195 | PHP658.39 |
| 250 - 998 | PHP299.57 | PHP599.14 |
| 1000 + | PHP263.625 | PHP527.25 |
*price indicative
- RS Stock No.:
- 268-8311
- Mfr. Part No.:
- SIHK105N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHK | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 132W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHK | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 132W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHK105N60E-T1-GE3
This MOSFET is a high-voltage N-channel transistor designed for power switching on printed circuit boards. It operates across a wide temperature span for industrial environments and is suited to applications requiring significant power handling and elevated drain-source voltage resilience. The device is mounted in a low-profile PowerPAK package to facilitate thermal management on PCB assemblies.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching
• 24A continuous drain current supports heavy load currents
• 0.1Ω low Rds(on) reduces conduction losses
• 132W maximum dissipation improves thermal headroom
• 53nC typical gate charge balances switching speed and drive effort
• Vgs 30V gate limit allows robust gate-drive ranges
• 24A continuous drain current supports heavy load currents
• 0.1Ω low Rds(on) reduces conduction losses
• 132W maximum dissipation improves thermal headroom
• 53nC typical gate charge balances switching speed and drive effort
• Vgs 30V gate limit allows robust gate-drive ranges
Applications
• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used with motor drive inverters requiring high voltage
• Can be used for power factor correction circuits
• Suitable for utility and renewable-energy interface electronics
• Ideal for switch-mode power conversion stages
• Used with motor drive inverters requiring high voltage
• Can be used for power factor correction circuits
• Suitable for utility and renewable-energy interface electronics
What temperature range can it reliably operate within?
The device is specified to function from -55°C up to 150°C, allowing use in demanding thermal environments.
What packaging and mounting considerations apply for thermal performance?
It is supplied in a PowerPAK 10x12 package intended for PCB mounting, which aids heat dissipation when paired with appropriate copper planes and thermal vias.
How does gate charge affect driver selection?
With a typical total gate charge of 53nC, drivers must supply sufficient current for desired switching speeds while managing gate-drive losses.
What is the maximum allowable gate-source voltage?
The maximum Vgs is 30V, so gate-drive circuits should be designed to stay within that limit to avoid device stress.
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