Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- RS Stock No.:
- 268-8311
- Mfr. Part No.:
- SIHK105N60E-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP722.06
(exc. VAT)
PHP808.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 2,050 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP361.03 | PHP722.06 |
| 50 - 98 | PHP350.20 | PHP700.40 |
| 100 - 248 | PHP329.195 | PHP658.39 |
| 250 - 998 | PHP299.57 | PHP599.14 |
| 1000 + | PHP263.625 | PHP527.25 |
*price indicative
- RS Stock No.:
- 268-8311
- Mfr. Part No.:
- SIHK105N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHK | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 132W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 9.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHK | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 132W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 9.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET with 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
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